Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Growth | Trends | Industry Analysis
MarketResearchNest.com adds “Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Research Report 2019”new report to its research database.
This comprehensive Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market research report includes a brief on these trends that can help the businesses operating in the industry to understand the market and strategize for their business expansion accordingly. The research report analyses the market size, industry share, growth, key segments, CAGR and key drivers.
IGBT aims to deliver faster switching rate and higher efficiency to enable proper operations at high voltage or high current. In addition, it can be used for dynamic breaking, where the power is dissipated by resistors that are connected in parallel or in series. It is widely used in high power rating applications, which include electric vehicle motor drives, inductive heating cookers, and appliance motor drives.
IGBT is widely used in various applications such as renewable energy, high voltage direct current (HVDC), motor drive, and consumer electronics, owing to its faster switching rate, high efficiency, and improved durability. Moreover, it supports high input impedance and improved parallel current sharing; thereby, fueling the market growth. However, performance issues, such as current leakage and breakdown, hamper the market growth. Proactive government initiatives to establish HVDCs and smart grids and increase in demand for consumer electronic are expected to provide lucrative opportunities to market players in the near future.
The global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market is valued at xx million US$ in 2018 is expected to reach xx million US$ by the end of 2025, growing at a CAGR of 12.3% during 2019-2025.
This report focuses on Circuit Breaker and Fuses volume and value at global level, regional level and company level. From a global perspective, this report represents overall Circuit Breaker and Fuses market size by analyzing historical data and future prospect. Regionally, this report focuses on several key regions: North America, Europe, China and Japan.
At company level, this report focuses on the production capacity, ex-factory price, revenue and market share for each manufacturer covered in this report.
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Segment by Regions
North America, Europe, China, Japan
The key players covered in this study
- Fairchild Semiconductor International Inc
- ABB Ltd
- Hitachi Power Semiconductor Device Ltd
- Toshiba Corporation
- Mitsubishi Electric Corporation
- Infineon Technologies AG
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Segment by Type
- Discrete IGBT
- IGBT Module
- Energy and Power
Segment by Application
- Consumer Electronics
- Inverter and UPS
- Electric Vehicle
- Industrial System
- Others (Medical Devices and Traction)
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The study objectives of this report are:
To analyze global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor status, future forecast, growth opportunity, key market and key players.
To present the Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor development in North America, Europe, China, Japan.
To strategically profile the key players and comprehensively analyze their development plan and strategies.
To define, describe and forecast the market by product type, market and key regions.
In this study, the years considered to estimate the market size of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor are as follows:
History Year: 2014-2018
Base Year: 2018
Estimated Year: 2019
Forecast Year 2019 to 2025
For the data information by region, company, type and application, 2018 is considered as the base year. Whenever data information was unavailable for the base year, the prior year has been considered.
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Mr. Jeet Jain